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| FLL600IQ-2C L-Band High Power GaAs FET FEATURES * * * * * Push-Pull Configuration High Power Output: 60W (Typ.) High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in W-CDMA and IMT 2000 base station amplifiers as it offers high gain, long term reliability and ease of use. APPLICATIONS * Solid State Base-Station Power Amplifier. * W-CDMA and IMT 2000 Communication Systems. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 125 -65 to +175 +175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 117 and -35.4 mA respectively with gate resistance of 10. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25C) Item Drain Current Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power Linear Gain Drain Current Power-Added Efficiency Thermal Resistance CASE STYLE: IU Symbol IDSS Vp VGSO Pout GL IDSR add Rth Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 151mA IGS = -1.51mA VDS = 12V f = 2.17 GHz IDS = 1.5A Pin = 39dBm Channel to Case Min. -0.1 -5 47.0 11.0 Limits Typ. Max. 6 -0.3 48.0 12.0 9 51 0.8 -0.5 13 1.2 Unit A V V dBm dB A % C/W Edition 1.0 February 2000 1 FLL600IQ-2C L-Band High Power GaAs FET ACP vs. OUTPUT POWER VDS = 12V IDS = 1.5A fo = 2.14GHz W-CDMA Single Signal -5MHz +5MHz -10MHz +10MHz IMD vs. OUTPUT POWER VDS = 12V IDS = 1.5A f = 2.14GHz f = 1MHz -25 -30 -35 -40 -30 -35 -40 Wide Band Tuned +IM3 +IM5 ACP (dBc) -45 -50 -55 -60 -65 IMD (dBc) 35 36 37 38 39 40 41 42 43 44 -45 -50 -55 -60 -65 34 35 36 37 38 39 40 41 42 43 44 Output Power (dBm) Output Power (dBm) OUTPUT POWER vs. FREQUENCY VDS = 12V IDS = 1.5A Wide Band Tuned 50 44 48 46 40dBm 38dBm 36dBm 34dBm 32dBm 30dBm OUTPUT POWER & add vs. INPUT POWER VDS =12V IDS = 1.5A f = 2.17GHz Wide Band Tuned 48 46 Output Power (dBm) 42 40 38 36 34 32 30 Pout 50 40 30 20 10 20 24 28 32 36 40 Output Power (dBm) 44 42 40 38 36 add 28dBm 28 26dBm Input Power (dBm) 24dBm 34 22dBm 1.99 2.02 2.05 2.08 2.11 2.14 2.17 2.20 2.23 2.26 2.29 2.32 Frequency (GHz) 2 add (%) FLL600IQ-2C L-Band High Power GaAs FET S-PARAMETERS VDS = 12V, IDS = 750mA FREQUENCY (MHZ) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000 4100 4200 4300 4400 4500 S11 MAG .923 .916 .897 .880 .856 .828 .794 .751 .710 .672 .641 .619 .615 .629 .670 .722 .788 .852 .883 .878 .816 .671 .304 .364 .489 .638 .726 .778 .802 .820 .836 .839 .835 .823 .769 .342 S21 ANG MAG .798 .811 .844 .879 .933 1.006 1.102 1.198 1.301 1.420 1.510 1.612 1.703 1.819 1.924 2.094 2.178 2.227 2.156 2.093 2.019 1.899 1.349 1.195 1.167 1.023 .790 .621 .499 .443 .401 .380 .363 .360 .364 .514 S12 ANG MAG .009 .010 .012 .014 .014 .018 .017 .020 .022 .022 .022 .020 .018 .013 .009 .006 .011 .018 .030 .039 .057 .063 .060 .035 .037 .039 .035 .037 .038 .032 .034 .037 .049 .070 .131 .381 S22 ANG MAG .853 .845 .841 .835 .828 .828 .833 .847 .864 .887 .905 .907 .906 .882 .841 .785 .703 .637 .602 .611 .649 .716 .800 .815 .831 .846 .857 .863 .863 .865 .864 .865 .865 .861 .862 .822 ANG 175.2 174.8 175.0 175.1 175.4 176.0 176.4 176.7 176.6 175.6 173.9 171.2 168.5 165.0 161.8 160.5 160.4 163.6 169.5 175.9 -179.3 -177.1 -179.1 177.0 174.7 172.5 170.0 167.4 165.3 163.1 160.3 157.5 154.3 150.9 146.4 137.7 168.0 166.5 164.7 163.1 161.4 159.9 158.3 157.3 156.9 157.7 159.0 162.1 164.7 167.3 168.5 167.8 162.7 153.7 140.8 123.3 98.1 60.6 3.9 23.2 -29.8 -65.9 -92.2 -109.9 -122.9 -132.5 -141.3 -149.1 -156.7 -165.2 -177.9 139.7 51.9 46.7 40.3 33.0 25.3 16.3 6.5 -4.8 -16.3 -30.4 -44.9 -60.8 -74.8 -90.9 -107.0 -123.3 -143.8 -165.4 172.6 151.0 127.8 101.7 72.0 74.8 53.6 30.1 11.3 -1.7 -10.6 -16.0 -23.6 -29.6 -37.3 -44.0 -49.0 -52.9 50.4 46.2 46.0 43.1 41.4 32.5 28.8 17.0 11.9 -2.9 -15.0 -26.2 -42.8 -66.7 -90.6 -149.2 131.7 101.8 80.0 54.9 37.0 9.4 -32.3 -27.7 -30.9 -34.4 -41.6 -47.1 -44.1 -55.1 -41.3 -38.8 -30.3 -29.1 -26.5 -63.5 Download S-Parameters, click here 3 FLL600IQ-2C L-Band High Power GaAs FET Case Style "IQ" 2.5 MIN. 2 1 0.1 (0.004) 8.0 (0.315) 0.2 3 6.0 (0.236) 0.2 2.5 MIN. 4-R1.3 (0.051) 0.15 2.0 (0.079) 4 5 17.4 (0.685) 0.2 2.4 (0.094) 0.13 1.9 (0.075) 16.4 (0.646) 0.2 4.4 Max. 1, 2: Gate 3: Source 4, 5: Drain Unit: mm (inches) 20.4 (0.803) 24.0 (0.945) 0.2 0.2 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FME, QDD (European Sales Office) Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI1199M200 4 |
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